Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a.
C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew
Max.
17 12 60 79 0.53 ± 16 150 9.0 7.9 5.0 -55 to + 175 300 (1.6mm from case ) 10 lbf
•in (1.1N
•m)
Units
A W W/°C V mJ A mJ V/ns °C
Thermal Resistance
Parameter
RθJC RθCS RθJA Junc.
isc N-Channel MOSFET Transistor IRL530N,IIRL530N ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.1Ω ·Enhancem.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IRL530 |
Fairchild Semiconductor |
Power MOSFET | |
2 | IRL530 |
International Rectifier |
Power MOSFET | |
3 | IRL530 |
Vishay |
Power MOSFET | |
4 | IRL530A |
Fairchild |
Advanced Power MOSFET | |
5 | IRL530NL |
International Rectifier |
HEXFET Power MOSFET | |
6 | IRL530NL |
INCHANGE |
N-Channel MOSFET | |
7 | IRL530NLPbF |
International Rectifier |
Power MOSFET | |
8 | IRL530NPBF |
International Rectifier |
Power MOSFET | |
9 | IRL530NS |
IRF |
HEXFET Power MOSFET | |
10 | IRL530NS |
INCHANGE |
N-Channel MOSFET | |
11 | IRL530NSPbF |
International Rectifier |
Power MOSFET | |
12 | IRL530S |
Vishay |
Power MOSFET |