Fifth Generation HEXFETs utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications..
rm Quantity Tube 50 Orderable Part Number IRL3705NPbF Absolute Maximum Ratings Symbol Parameter ID @ TC = 25°C Continuous Drain Current, VGS @ 10V ID @ TC = 100°C IDM PD @TC = 25°C Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipation Linear Derating Factor VGS EAS IAR EAR dv/dt Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt TJ Operating Junction and TSTG Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting torque, 6-32 o.
Fifth Generation HEXFETs utilize advanced processing techniques to achieve extremely low onresistance per silicon area. .
isc N-Channel MOSFET Transistor IRL3705NPBF ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤10mΩ ·Lead-Free ·Fa.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IRL3705N |
International Rectifier |
Power MOSFET | |
2 | IRL3705N |
INCHANGE |
N-Channel MOSFET | |
3 | IRL3705NL |
International Rectifier |
HEXFET Power MOSFET | |
4 | IRL3705NL |
INCHANGE |
N-Channel MOSFET | |
5 | IRL3705NLPBF |
International Rectifier |
HEXFET Power MOSFET | |
6 | IRL3705NS |
International Rectifier |
HEXFET Power MOSFET | |
7 | IRL3705NS |
INCHANGE |
N-Channel MOSFET | |
8 | IRL3705NSPBF |
International Rectifier |
HEXFET Power MOSFET | |
9 | IRL3705Z |
International Rectifier |
AUTOMOTIVE MOSFET | |
10 | IRL3705Z |
INCHANGE |
N-Channel MOSFET | |
11 | IRL3705ZL |
International Rectifier |
AUTOMOTIVE MOSFET | |
12 | IRL3705ZLPbF |
International Rectifier |
Power MOSFET |