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isc N-Channel MOSFET Transistor ·FEATURES ·With TO-263( D2PAK ) packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) S.
·With TO-263( D2PAK ) packaging
·High speed switching
·Low gate input resistance
·Standard level gate drive
·Easy to use
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS
·Power supply
·Switching applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
55
VGSS ID IDM
Gate-Source Voltage
Drain Current-Continuous;Tc=25℃ Tc=100℃
Drain Current-Single Pulsed
±16
89 63
310
PD
Total Dissipation
170
Tj
Operating Junction Temperature
175
Tstg
Storage Temperature
-55~175
UNI.
IRL3705NS - International Rectifier
l VDSS = 55V RDS(on) = 0.01Ω G ID = 89A S Fifth Generation HEXFETs from International Rectifier utilize advanced pr.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IRL3705N |
International Rectifier |
Power MOSFET |
|
| 2 | IRL3705N |
INCHANGE |
N-Channel MOSFET |
|
| 3 | IRL3705NL |
International Rectifier |
HEXFET Power MOSFET |
|
| 4 | IRL3705NL |
INCHANGE |
N-Channel MOSFET |
|
| 5 | IRL3705NLPBF |
International Rectifier |
HEXFET Power MOSFET |
|
| 6 | IRL3705NPBF |
International Rectifier |
Power MOSFET |
|
| 7 | IRL3705NPBF |
INCHANGE |
N-Channel MOSFET |
|
| 8 | IRL3705NPbF |
Infineon |
Power MOSFET |
|
| 9 | IRL3705NSPBF |
International Rectifier |
HEXFET Power MOSFET |
|
| 10 | IRL3705Z |
International Rectifier |
AUTOMOTIVE MOSFET |
|
| 11 | IRL3705Z |
INCHANGE |
N-Channel MOSFET |
|
| 12 | IRL3705ZL |
International Rectifier |
AUTOMOTIVE MOSFET |
|