This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use.
l Logic Level l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. PD - 95579A IRL3705.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IRL3705ZL |
International Rectifier |
AUTOMOTIVE MOSFET | |
2 | IRL3705Z |
International Rectifier |
AUTOMOTIVE MOSFET | |
3 | IRL3705Z |
INCHANGE |
N-Channel MOSFET | |
4 | IRL3705ZPbF |
International Rectifier |
Power MOSFET | |
5 | IRL3705ZS |
International Rectifier |
AUTOMOTIVE MOSFET | |
6 | IRL3705ZS |
INCHANGE |
N-Channel MOSFET | |
7 | IRL3705ZSPbF |
International Rectifier |
Power MOSFET | |
8 | IRL3705N |
International Rectifier |
Power MOSFET | |
9 | IRL3705N |
INCHANGE |
N-Channel MOSFET | |
10 | IRL3705NL |
International Rectifier |
HEXFET Power MOSFET | |
11 | IRL3705NL |
INCHANGE |
N-Channel MOSFET | |
12 | IRL3705NLPBF |
International Rectifier |
HEXFET Power MOSFET |