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IRL3705NPbF |
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| Part Number | IRL3705NPbF |
| Manufacturer | Infineon (https://www.infineon.com/) |
| Description | Fifth Generation HEXFETs utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device desig... |
| Features |
rm
Quantity
Tube
50
Orderable Part Number IRL3705NPbF
Absolute Maximum Ratings
Symbol
Parameter
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
ID @ TC = 100°C IDM PD @TC = 25°C
Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipation
Linear Derating Factor
VGS EAS IAR EAR dv/dt
Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt
TJ
Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Mounting torque, 6-32 o... |
| Document |
 IRL3705NPbF Data Sheet
PDF 444.32KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IRL3705NPBF |
International Rectifier |
Power MOSFET |
|
| 2 | IRL3705NPBF |
INCHANGE |
N-Channel MOSFET |
|
| 3 | IRL3705N |
International Rectifier |
Power MOSFET |
|
| 4 | IRL3705N |
INCHANGE |
N-Channel MOSFET |
|
| 5 | IRL3705NL |
International Rectifier |
HEXFET Power MOSFET |
|