IRL3705NSPBF - International Rectifier

IRL3705NSPBF HEXFET Power MOSFET

l l IRL3705NSPbF IRL3705NLPbF D HEXFET® Power MOSFET VDSS = 55V G S RDS(on) = 0.01Ω ID = 89A† Absolute Maximum Ratings ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 25°C V GS EAS IAR EAR dv/dt TJ TSTG Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silic.

Features

st possible onresistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRL3705NL) is available for lowprofile applications. D 2 Pak TO-262 Parameter Continuous Drain Current, VGS @ 10V… Continuous Drain Current, VGS @ 10V… Pulsed Drain Current … Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy‚… Avalanche Current Repetitive Avalanche Energy.