IRG4BC20KDPBF - International Rectifier

IRG4BC20KDPBF INSULATED GATE BIPOLAR TRANSISTOR

PD -94907 IRG4BC20KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than previous generation • IGB.

Features

• Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than previous generation • IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations • Industry standard TO-220AB package • Lead-Free C G E n-channel Benefits • Latest generation 4 IGBTs offer highest power density controls possible • HEXFREDTM diodes optimized for performance with IGBTs. Minimized recovery chara.