PD -95677 IRG4BC20KD-SPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than previous generation IGB.
Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than previous generation IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations Industry standard D2Pak package Lead-Free C Short Circuit Rated UltraFast IGBT VCES = 600V G E VCE(on) typ. = 2.27V @VGE = 15V, IC = 9.0A n-channel density motor controls possible. HEXFREDTM diodes optimized for performan.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IRG4BC20KD-S |
IRF |
INSULATED GATE BIPOLAR TRANSISTOR | |
2 | IRG4BC20KD |
IRF |
INSULATED GATE BIPOLAR TRANSISTOR | |
3 | IRG4BC20KDPBF |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR | |
4 | IRG4BC20K |
IRF |
INSULATED GATE BIPOLAR TRANSISTOR | |
5 | IRG4BC20K-S |
IRF |
INSULATED GATE BIPOLAR TRANSISTOR | |
6 | IRG4BC20K-SPBF |
International Rectifier |
Short Circuit Rated UltraFast IGBT | |
7 | IRG4BC20F |
IRF |
INSULATED GATE BIPOLAR TRANSISTOR | |
8 | IRG4BC20FD |
IRF |
INSULATED GATE BIPOLAR TRANSISTOR | |
9 | IRG4BC20FD-S |
IRF |
INSULATED GATE BIPOLAR TRANSISTOR | |
10 | IRG4BC20FD-SPBF |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR | |
11 | IRG4BC20FDPBF |
International Rectifier |
INSULATED GATEBIPOLAR TRANSISTOR | |
12 | IRG4BC20FPBF |
International Rectifier |
Fast Speed IGBT |