PD - 91602A IRG4BC20F INSULATED GATE BIPOLAR TRANSISTOR Features • Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry standard TO-220AB package C Fast Speed IGBT VCES = 600V G E VCE(on.
• Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode).
• Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3
• Industry standard TO-220AB package
C
Fast Speed IGBT
VCES = 600V
G E
VCE(on) typ. = 1.66V
@VGE = 15V, IC = 9.0A
n-channel
Benefits
• Generation 4 IGBTs offer highest efficiency available
• IGBTs optimized for specified application conditions
• Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBTs
TO-220AB
Absolute Maximum Ratings
Param.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IRG4BC20FD |
IRF |
INSULATED GATE BIPOLAR TRANSISTOR | |
2 | IRG4BC20FD-S |
IRF |
INSULATED GATE BIPOLAR TRANSISTOR | |
3 | IRG4BC20FD-SPBF |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR | |
4 | IRG4BC20FDPBF |
International Rectifier |
INSULATED GATEBIPOLAR TRANSISTOR | |
5 | IRG4BC20FPBF |
International Rectifier |
Fast Speed IGBT | |
6 | IRG4BC20K |
IRF |
INSULATED GATE BIPOLAR TRANSISTOR | |
7 | IRG4BC20K-S |
IRF |
INSULATED GATE BIPOLAR TRANSISTOR | |
8 | IRG4BC20K-SPBF |
International Rectifier |
Short Circuit Rated UltraFast IGBT | |
9 | IRG4BC20KD |
IRF |
INSULATED GATE BIPOLAR TRANSISTOR | |
10 | IRG4BC20KD-S |
IRF |
INSULATED GATE BIPOLAR TRANSISTOR | |
11 | IRG4BC20KD-SPBF |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR | |
12 | IRG4BC20KDPBF |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR |