IRG4BC20KDPBF |
Part Number | IRG4BC20KDPBF |
Manufacturer | International Rectifier |
Description | PD -94907 IRG4BC20KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short ... |
Features |
Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V
Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than previous generation
IGBT co-packaged with HEXFREDTM ultrafast,
ultra-soft-recovery anti-parallel diodes for use in bridge configurations Industry standard TO-220AB package Lead-Free
C
G E
n-channel
Benefits
Latest generation 4 IGBTs offer highest power density controls possible HEXFREDTM diodes optimized for performance with IGBTs.
Minimized recovery chara... |
Document |
IRG4BC20KDPBF Data Sheet
PDF 304.65KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | IRG4BC20KD |
IRF |
INSULATED GATE BIPOLAR TRANSISTOR | |
2 | IRG4BC20KD-S |
IRF |
INSULATED GATE BIPOLAR TRANSISTOR | |
3 | IRG4BC20KD-SPBF |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR | |
4 | IRG4BC20K |
IRF |
INSULATED GATE BIPOLAR TRANSISTOR | |
5 | IRG4BC20K-S |
IRF |
INSULATED GATE BIPOLAR TRANSISTOR |