IRG4BC20KD - IRF

IRG4BC20KD INSULATED GATE BIPOLAR TRANSISTOR

PD -91599A IRG4BC20KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than previous generation • IGBT co.

Features

• Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V
• Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than previous generation
• IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations
• Industry standard TO-220AB package C Short Circuit Rated UltraFast IGBT VCES = 600V G E VCE(on) typ. = 2.27V @VGE = 15V, IC = 9.0A n-ch an nel Benefits
• Latest generation 4 IGBTs offer highest power density motor controls p.