isc N-Channel MOSFET Transistor ·FEATURES ·With TO-263( D2PAK ) packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) S.
·With TO-263( D2PAK ) packaging
·High speed switching
·Low gate input resistance
·Standard level gate drive
·Easy to use
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS
·Power supply
·Switching applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
60
VGSS ID IDM
Gate-Source Voltage
Drain Current-Continuous;Tc=25℃ Tc=100℃
Drain Current-Single Pulsed
±20
72 51
290
PD
Total Dissipation
150
Tj
Operating Junction Temperature
175
Tstg
Storage Temperature
-55~175
UNI.
Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IRFZ48V |
International Rectifier |
Power MOSFET | |
2 | IRFZ48V |
INCHANGE |
N-Channel MOSFET | |
3 | IRFZ48VPBF |
International Rectifier |
Power MOSFET | |
4 | IRFZ48VSPBF |
International Rectifier |
Power MOSFET | |
5 | IRFZ48 |
Vishay |
Power MOSFET | |
6 | IRFZ48 |
INCHANGE |
N-Channel MOSFET | |
7 | IRFZ48L |
Vishay |
Power MOSFET | |
8 | IRFZ48N |
NXP |
N-Channel MOSFET | |
9 | IRFZ48N |
International Rectifier |
Power MOSFET | |
10 | IRFZ48NL |
International Rectifier |
Power MOSFET | |
11 | IRFZ48NLPBF |
International Rectifier |
HEXFET Power MOSFET | |
12 | IRFZ48NPBF |
International Rectifier |
Power MOSFET |