IRFZ48NLPBF - International Rectifier

IRFZ48NLPBF HEXFET Power MOSFET

Advanced Process Technology Surface Mount (IRFZ48NS) Low-profile through-hole (IRFZ48NL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free G IRFZ48NSPbF IRFZ48NLPbF D PD - 95125 HEXFET® Power MOSFET VDSS = 55V RDS(on) = 0.014Ω ID = 64A S Advanced HEXFET ® Power MOSFETs from International Rectifier utilize advanced processing tec.

Features

nce and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRFZ48NL) is available for lowprofile applications. www.DataSheet4U.com D 2 Pak TO-262 Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 25°C VGS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Avalanche Current  Repetitive Avalanche Energy Peak Diode Recovery dv/dt ƒ Operating Junction and Storage T.