N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in switched mode power supplies and general purpose switching applications. IRFZ48N QUICK REFERENCE DA.
very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in switched mode power supplies and general purpose switching applications. IRFZ48N QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance VGS = 10 V MAX. 55 64 140 175 16 UNIT V A W ˚C mΩ PINNING - TO220AB PIN 1 2 3 tab gate drain source drain DESCRIPTION PIN CONFIGURATION tab SYMBOL d g s 1 23 LIMITING VALUES Limiting values in accordance with the A.
Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IRFZ48 |
Vishay |
Power MOSFET | |
2 | IRFZ48 |
INCHANGE |
N-Channel MOSFET | |
3 | IRFZ48L |
Vishay |
Power MOSFET | |
4 | IRFZ48NL |
International Rectifier |
Power MOSFET | |
5 | IRFZ48NLPBF |
International Rectifier |
HEXFET Power MOSFET | |
6 | IRFZ48NPBF |
International Rectifier |
Power MOSFET | |
7 | IRFZ48NS |
International Rectifier |
Power MOSFET | |
8 | IRFZ48NS |
INCHANGE |
N-Channel MOSFET | |
9 | IRFZ48NSPBF |
International Rectifier |
HEXFET Power MOSFET | |
10 | IRFZ48R |
International Rectifier |
Power MOSFET | |
11 | IRFZ48RL |
International Rectifier |
HEXFET Power MOSFET | |
12 | IRFZ48RS |
International Rectifier |
HEXFET Power MOSFET |