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isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRFZ48V， IIRFZ48V ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤12mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·reliable device for use in a wide variety of applications ·ABSO.
·Static drain-source on-resistance:
RDS(on) ≤12mΩ
·Enhancement mode
·Fast Switching Speed
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION
·reliable device for use in a wide variety of applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
60
VGS
Gate-Source Voltage
±20
ID
Drain Current-Continuous
72
IDM
Drain Current-Single Pulsed
290
PD
Total Dissipation @TC=25℃
150
Tj
Max. Operating Junction Temperature
175
Tstg
Storage Temperature
-55~175
UNIT V V A A W .
IRFZ48V - International Rectifier
Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IRFZ48 |
Vishay |
Power MOSFET |
|
| 2 | IRFZ48 |
INCHANGE |
N-Channel MOSFET |
|
| 3 | IRFZ48L |
Vishay |
Power MOSFET |
|
| 4 | IRFZ48N |
NXP |
N-Channel MOSFET |
|
| 5 | IRFZ48N |
International Rectifier |
Power MOSFET |
|
| 6 | IRFZ48NL |
International Rectifier |
Power MOSFET |
|
| 7 | IRFZ48NLPBF |
International Rectifier |
HEXFET Power MOSFET |
|
| 8 | IRFZ48NPBF |
International Rectifier |
Power MOSFET |
|
| 9 | IRFZ48NS |
International Rectifier |
Power MOSFET |
|
| 10 | IRFZ48NS |
INCHANGE |
N-Channel MOSFET |
|
| 11 | IRFZ48NSPBF |
International Rectifier |
HEXFET Power MOSFET |
|
| 12 | IRFZ48R |
International Rectifier |
Power MOSFET |
|