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IRFZ48VS |
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| Part Number | IRFZ48VS |
| Manufacturer | International Rectifier |
| Description | Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switchi... |
| Features |
n dissipate up to 2.0W in a typical surface mount application.
D2Pak
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew
Max.
72 51 290 150 1.0 ± 20 ... |
| Document |
 IRFZ48VS Data Sheet
PDF 282.70KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IRFZ48V |
International Rectifier |
Power MOSFET |
|
| 2 | IRFZ48V |
INCHANGE |
N-Channel MOSFET |
|
| 3 | IRFZ48VPBF |
International Rectifier |
Power MOSFET |
|
| 4 | IRFZ48VS |
INCHANGE |
N-Channel MOSFET |
|
| 5 | IRFZ48VSPBF |
International Rectifier |
Power MOSFET |
|