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IRFZ34L - Vishay

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IRFZ34L Power MOSFET

D I2PAK (TO-262) D2PAK (TO-263) G G D S D S G S N-Channel MOSFET Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with a.

Features


• Halogen-free According to IEC 61249-2-21 Definition
• Advanced Process Technology
• Surface Mount
• Low-Profile Through-Hole (IRFZ34L, SiHFZ34L)
• 175 °C Operating Temperature
• Fast Switching
• Compliant to RoHS Directive 2002/95/EC DESCRIPTION D I2PAK (TO-262) D2PAK (TO-263) G G D S D S G S N-Channel MOSFET Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the desig.

The same part from a different manufacturer

Datasheet IRFZ34L - International Rectifier IRFZ34L

Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on.

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