D I2PAK (TO-262) D2PAK (TO-263) G G D S D S G S N-Channel MOSFET Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with a.
• Halogen-free According to IEC 61249-2-21 Definition
• Advanced Process Technology
• Surface Mount
• Low-Profile Through-Hole (IRFZ34L, SiHFZ34L)
• 175 °C Operating Temperature
• Fast Switching
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
D
I2PAK (TO-262)
D2PAK (TO-263)
G G D S
D S
G
S N-Channel MOSFET
Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the desig.
Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IRFZ34 |
Fairchild Semiconductor |
Power MOSFET | |
2 | IRFZ34 |
Samsung Electronics |
N-Channel Power MOSFET | |
3 | IRFZ34 |
International Rectifier |
Power MOSFET | |
4 | IRFZ34 |
Vishay |
Power MOSFET | |
5 | IRFZ34A |
Fairchild Semiconductor |
Power MOSFET | |
6 | IRFZ34A |
Samsung Electronics |
Power MOSFET | |
7 | IRFZ34E |
International Rectifier |
Power MOSFET | |
8 | IRFZ34EPBF |
International Rectifier |
Power MOSFET | |
9 | IRFZ34N |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
10 | IRFZ34N |
International Rectifier |
Power MOSFET | |
11 | IRFZ34N |
ART CHIP |
Power MOSFET | |
12 | IRFZ34NL |
International Rectifier |
Power MOSFET |