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IRFZ34L |
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| Part Number | IRFZ34L |
| Manufacturer | International Rectifier |
| Description | Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching spe... |
| Features |
application. The through-hole version (IRFZ34L) is available for lowprofile applications.
S
D 2 Pak
T O -2 6 2
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 25°C VGS EAS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds
Max.
30 21 120 3.7 88 0.59 ± 20 200 4... |
| Document |
 IRFZ34L Data Sheet
PDF 305.44KB |
| Distributor | Stock | Price | Buy |
|---|
