$GYDQFHG 3RZHU 026)(7 FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ 175°C Operating Temperature ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 60V ♦ Lower RDS(ON): 0.030Ω (Typ.) Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TS.
♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ 175°C Operating Temperature ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 60V ♦ Lower RDS(ON): 0.030Ω (Typ.) Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25°C) Continuous Drain Current (TC=100°C) Drain Current-Pulsed (1) Gate-to-Source Voltage Single Pulsed Avalanche Energy (2) Avalanche Current (1) Repetitive Avalanche Energy (1) Peak.
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IRFZ34 |
Fairchild Semiconductor |
Power MOSFET | |
2 | IRFZ34 |
Samsung Electronics |
N-Channel Power MOSFET | |
3 | IRFZ34 |
International Rectifier |
Power MOSFET | |
4 | IRFZ34 |
Vishay |
Power MOSFET | |
5 | IRFZ34E |
International Rectifier |
Power MOSFET | |
6 | IRFZ34EPBF |
International Rectifier |
Power MOSFET | |
7 | IRFZ34L |
International Rectifier |
Power MOSFET | |
8 | IRFZ34L |
Vishay |
Power MOSFET | |
9 | IRFZ34N |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
10 | IRFZ34N |
International Rectifier |
Power MOSFET | |
11 | IRFZ34N |
ART CHIP |
Power MOSFET | |
12 | IRFZ34NL |
International Rectifier |
Power MOSFET |