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$GYDQFHG 3RZHU 026)(7 FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ 175°C Operating Temperature ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 60V ♦ Lower RDS(ON): 0.030Ω (Typ.) Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TS.
♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ 175°C Operating Temperature ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 60V ♦ Lower RDS(ON): 0.030Ω (Typ.) Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25°C) Continuous Drain Current (TC=100°C) Drain Current-Pulsed (1) Gate-to-Source Voltage Single Pulsed Avalanche Energy (2) Avalanche Current (1) Repetitive Avalanche Energy (1) Peak.
IRFZ34 - Vishay
Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IRFZ30 |
International Rectifier |
N-Channel Power MOSFET |
|
| 2 | IRFZ30 |
Samsung Electronics |
N-Channel Power MOSFET |
|
| 3 | IRFZ30 |
Motorola |
Power Field Effect Transistors |
|
| 4 | IRFZ32 |
International Rectifier |
N-Channel Power MOSFET |
|
| 5 | IRFZ32 |
Motorola |
Power Field Effect Transistors |
|
| 6 | IRFZ34A |
Fairchild Semiconductor |
Power MOSFET |
|
| 7 | IRFZ34A |
Samsung Electronics |
Power MOSFET |
|
| 8 | IRFZ34E |
International Rectifier |
Power MOSFET |
|
| 9 | IRFZ34EPBF |
International Rectifier |
Power MOSFET |
|
| 10 | IRFZ34L |
International Rectifier |
Power MOSFET |
|
| 11 | IRFZ34L |
Vishay |
Power MOSFET |
|
| 12 | IRFZ34N |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
