IRFZ34E - International Rectifier

IRFZ34E Power MOSFET

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a.

Features

t, VGS @ 10V Pulsed Drain Current  Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy‚ Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt ƒ Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew Thermal Resistance RθJC RθCS RθJA Parameter Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient PD - 9.1672A IRFZ34E HEXFET® Power MOSFET D VDSS = 60V RDS(on) = 0.042Ω ID = 28A S TO-220AB Max. 28 20 112 68 0.46 ± 20 97 17 6.8 5.0 -55 to + 175 300.