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IRFZ34E |
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| Part Number | IRFZ34E |
| Manufacturer | International Rectifier |
| Description | Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast swi... |
| Features |
t, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew
Thermal Resistance
RθJC RθCS RθJA
Parameter Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient
PD - 9.1672A
IRFZ34E
HEXFET® Power MOSFET
D
VDSS = 60V
RDS(on) = 0.042Ω
ID = 28A
S
TO-220AB
Max. 28 20 112 68 0.46 ± 20 97 17 6.8 5.0
-55 to + 175
300... |
| Document |
 IRFZ34E Data Sheet
PDF 120.73KB |
| Distributor | Stock | Price | Buy |
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