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isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on)≤22mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Fast switching ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 200 V VGS Gate.
·Static drain-source on-resistance:
RDS(on)≤22mΩ
·Enhancement mode:
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION
·Fast switching
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
200
V
VGS
Gate-Source Voltage
±30
V
ID
Drain Current-Continuous
62
A
IDM
Drain Current-Single Pulsed
260
A
PD
Total Dissipation @TC=25℃
330
W
Tj
Max. Operating Junction Temperature
175
℃
Tstg
Storage Temperature
-40~175
℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(j-c.
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