IRFSL4127PbF - International Rectifier

IRFSL4127PbF Power MOSFET

Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits G Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability l Lead-Free PD - 961.

Features

Avalanche Characteristics EAS (Thermally limited) IAR EAR dSingle Pulse Avalanche Energy cAvalanche Current fRepetitive Avalanche Energy Thermal Resistance Symbol RθJC RθJA Parameter jkJunction-to-Case ijJunction-to-Ambient www.irf.com Max. 72 51 300 375 2.5 ± 20 57 -55 to + 175 300 x x10lb in (1.1N m) 250 See Fig. 14, 15, 22a, 22b, Typ.
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  – Max. 0.4 40 Units A W W/°C V V/ns °C mJ A mJ Units °C/W 1 09/16/08 IRFS/SL4127PbF Static @ TJ = 25°C (unless otherwise specified) Symbol Parameter Min. V(BR)DSS ∆V(BR)DSS/∆TJ RDS(on) VGS(th) IDSS Drain-to-Source Breakdown Voltage Brea.