IRFSL41N15D - IRF

IRFSL41N15D HEXFET Power MOSFET

PD - 93804B Applications l High frequency DC-DC converters HEXFET® Power MOSFET IRFB41N15D IRFIB41N15D IRFS41N15D IRFSL41N15D VDSS RDS(on) max Benefits l l l Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) Fully Characterized Avalanche Voltage and C.

Features

and e Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw 300 (1.6mm from case ) 1.1(10) N
•m (lbf
•in) Thermal Resistance Parameter RθJC RθJC Rθcs RθJA RθJA RθJA Junction-to-Case Junction-to-Case, Fullpak Case-to-Sink, Flat, Greased Surface Typ.
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  – 0.50
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  – Max. 0.75 3.14
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  – 62 40 65 Units °C/W h Junction-to-Ambient, D Pak i Junction-to-Ambient, TO-220 2 h Junction-to-Ambient, Fullpak Notes  through ‡ are on page 12 www.irf.com 1 07/16/03 IRFB/IRFIB/IRFS/IRFSL41N15D Static @ TJ = 25°C (unless otherwise specified) Parame.