Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
Isc N-Channel MOSFET Transistor ·FEATURES ·With TO-262 packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL P.
·With TO-262 packaging
·High speed switching
·Low gate input resistance
·Standard level gate drive
·Easy to use
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS
·Power supply
·Switching applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
200
VGS
Gate-Source Voltage
±20
ID
Drain Current-Continuous
18
PD
Total Dissipation @TC=25℃
100
Tj
Max. Operating Junction Temperature
-55~175
Tstg
Storage Temperature
-55~175
UNIT V V A W ℃ ℃
·THERMAL CHARACTERISTICS
SY.
IRFSL4020PbF - International Rectifier
This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes the .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IRFSL4010PbF |
International Rectifier |
Power MOSFET |
|
| 2 | IRFSL4115 |
INCHANGE |
N-Channel MOSFET |
|
| 3 | IRFSL4115PbF |
International Rectifier |
Power MOSFET |
|
| 4 | IRFSL4127 |
INCHANGE |
N-Channel MOSFET |
|
| 5 | IRFSL4127PbF |
International Rectifier |
Power MOSFET |
|
| 6 | IRFSL41N15D |
IRF |
HEXFET Power MOSFET |
|
| 7 | IRFSL41N15DPbF |
International Rectifier |
HEXFET Power MOSFET |
|
| 8 | IRFSL4227 |
INCHANGE |
N-Channel MOSFET |
|
| 9 | IRFSL4227PbF |
International Rectifier |
PDP SWITCH |
|
| 10 | IRFSL4228PbF |
International Rectifier |
PDP SWITCH |
|
| 11 | IRFSL42N20D |
International Rectifier |
(IRFx42N20D) High frequency DC-DC converters |
|
| 12 | IRFSL4310 |
IRF |
HEXFET Power MOSFET |
|