isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRFSL4115 ·FEATURES ·With TO-262 packaging ·Uninterruptible power supply ·High speed switching ·Hard switched and high frequency circuits ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operationz ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM.
·With TO-262 packaging
·Uninterruptible power supply
·High speed switching
·Hard switched and high frequency circuits
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operationz
·APPLICATIONS
·Switching applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
150
V
VGSS
Gate-Source Voltage
±20
V
ID
Drain Current-Continuous@TC=25℃ TC=100℃
99 70
A
IDM
Drain Current-Single Pulsed
396
A
PD
Total Dissipation
375
W
Tj
Operating Junction Temperature
-55~175
℃
Tstg
Storage Temper.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IRFSL4115PbF |
International Rectifier |
Power MOSFET | |
2 | IRFSL4127 |
INCHANGE |
N-Channel MOSFET | |
3 | IRFSL4127PbF |
International Rectifier |
Power MOSFET | |
4 | IRFSL41N15D |
IRF |
HEXFET Power MOSFET | |
5 | IRFSL41N15DPbF |
International Rectifier |
HEXFET Power MOSFET | |
6 | IRFSL4010PbF |
International Rectifier |
Power MOSFET | |
7 | IRFSL4020PbF |
International Rectifier |
Digital Audio MOSFET | |
8 | IRFSL4020PBF |
INCHANGE |
N-Channel MOSFET | |
9 | IRFSL4227 |
INCHANGE |
N-Channel MOSFET | |
10 | IRFSL4227PbF |
International Rectifier |
PDP SWITCH | |
11 | IRFSL4228PbF |
International Rectifier |
PDP SWITCH | |
12 | IRFSL42N20D |
International Rectifier |
(IRFx42N20D) High frequency DC-DC converters |