PD - 94360 IRFP32N50KS Applications SMPS MOSFET HEXFET® Power MOSFET l Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits VDSS 500V RDS(on)typ. 0.135Ω ID 32A Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv/.
0lb
*in (1.1N
*m)
Symbol
EAS IAR EAR
Parameter Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy
Thermal Resistance
Symbol
RθJC RθCS RθJA
Parameter Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient
www.irf.com
Typ.
–
–
–
–
–
–
–
–
–
Typ.
–
–
– 0.24
–
–
–
Max. 450 32 46
Max. 0.26
–
–
– 40
Units mJ A mJ
Units
°C/W
1
12/18/01
IRFP32N50KS
Static @ TJ = 25°C (unless otherwise specified)
Symbol V(BR)DSS ∆V(BR)DSS/∆TJ RDS(on) VGS(th)
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance G.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IRFP32N50K |
International Rectifier |
Power MOSFET | |
2 | IRFP32N50K |
INCHANGE |
N-Channel MOSFET | |
3 | IRFP32N50KPBF |
International Rectifier |
HEXFET Power MOSFET | |
4 | IRFP3205 |
BLUE ROCKET ELECTRONICS |
N-CHANNEL MOSFET | |
5 | IRFP3206 |
INCHANGE |
N-Channel MOSFET | |
6 | IRFP3206PBF |
International Rectifier |
HEXFET Power MOSFET | |
7 | IRFP3207Z |
INCHANGE |
N-Channel MOSFET | |
8 | IRFP3006 |
INCHANGE |
N-Channel MOSFET | |
9 | IRFP3006PBF |
International Rectifier |
Power MOSFET | |
10 | IRFP3077 |
INCHANGE |
N-Channel MOSFET | |
11 | IRFP3077PBF |
International Rectifier |
Power MOSFET | |
12 | IRFP31N50L |
International Rectifier |
Power MOSFET |