isc N-Channel MOSFET Transistor IRFP3206,IIRFP3206 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤3.0mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High Efficiency Synchronous Rectification in SMPS ·Uninterruptible Power Supply ·High Speed Power Switching.
·Static drain-source on-resistance:
RDS(on)≤3.0mΩ
·Enhancement mode:
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION
·High Efficiency Synchronous Rectification in SMPS
·Uninterruptible Power Supply
·High Speed Power Switching
·Hard Switched And High Frequency Circuits
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
60
VGS
Gate-Source Voltage
±20
ID
Drain Current-Continuous
120
IDM
Drain Current-Single Pulsed
840
PD
Total Dissipation @TC=25℃
280
Tj
Max. Operating Junct.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IRFP3205 |
BLUE ROCKET ELECTRONICS |
N-CHANNEL MOSFET | |
2 | IRFP3206PBF |
International Rectifier |
HEXFET Power MOSFET | |
3 | IRFP3207Z |
INCHANGE |
N-Channel MOSFET | |
4 | IRFP32N50K |
International Rectifier |
Power MOSFET | |
5 | IRFP32N50K |
INCHANGE |
N-Channel MOSFET | |
6 | IRFP32N50KPBF |
International Rectifier |
HEXFET Power MOSFET | |
7 | IRFP32N50KS |
International Rectifier |
Power MOSFET | |
8 | IRFP3006 |
INCHANGE |
N-Channel MOSFET | |
9 | IRFP3006PBF |
International Rectifier |
Power MOSFET | |
10 | IRFP3077 |
INCHANGE |
N-Channel MOSFET | |
11 | IRFP3077PBF |
International Rectifier |
Power MOSFET | |
12 | IRFP31N50L |
International Rectifier |
Power MOSFET |