IRFP3006PbF 60V 2.1m 2.5m 270A 195A G VDSS RDS(on) typ. max. ID (Silicon Limited) ID (Package Limited) D D G S S TO-247AC Applications High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply High Speed Power Switching Hard Switched and High Frequency Circuits Benefits Improved Gate, Avalanche and Dynamic dV/d.
Maximum Power Dissipation PD @TC = 25°C Linear Derating Factor Gate-to-Source Voltage VGS Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting torque, 6-32 or M3 screw Avalanche Characteristics EAS (Thermally limited) Single Pulse Avalanche Energy IAR Avalanche Current EAR Repetitive Avalanche Energy Thermal Resistance Symbol Parameter Junction-to-Case RJC Case-to-Sink, Flat Greased Surface RCS Junction-to-Ambient RJA TJ TSTG 1 www.irf.com © 2013 International Rectifier
-55 to + 175
10lbf
in (.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IRFP3006 |
INCHANGE |
N-Channel MOSFET | |
2 | IRFP3077 |
INCHANGE |
N-Channel MOSFET | |
3 | IRFP3077PBF |
International Rectifier |
Power MOSFET | |
4 | IRFP31N50L |
International Rectifier |
Power MOSFET | |
5 | IRFP31N50L |
Vishay Siliconix |
Power MOSFET | |
6 | IRFP31N50L |
INCHANGE |
N-Channel MOSFET | |
7 | IRFP3205 |
BLUE ROCKET ELECTRONICS |
N-CHANNEL MOSFET | |
8 | IRFP3206 |
INCHANGE |
N-Channel MOSFET | |
9 | IRFP3206PBF |
International Rectifier |
HEXFET Power MOSFET | |
10 | IRFP3207Z |
INCHANGE |
N-Channel MOSFET | |
11 | IRFP32N50K |
International Rectifier |
Power MOSFET | |
12 | IRFP32N50K |
INCHANGE |
N-Channel MOSFET |