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IRFP31N50L - International Rectifier

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IRFP31N50L Power MOSFET

www.DataSheet4U.com PD - 94081 SMPS MOSFET IRFP31N50L Applications HEXFET® Power MOSFET l Switch Mode Power Supply (SMPS) l UninterruptIble Power Supply VDSS RDS(on) typ. ID l High Speed Power Switching 500V 0.15Ω 31A l ZVS and High Frequency Circuit l PWM Inverters Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalan.

Features

3.7 ± 30 19 -55 to + 150 300 10 lbf
•in (1.1N
•m) Units A W W/°C V V/ns www.DataSheet4U.com °C Diode Characteristics Symbol IS ISM VSD trr Qrr IRRM ton Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)  Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Forward Turn-On Time Min. Typ. Max. Units Conditions D
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  – 31 MOSFET symbol showing the A G
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  – 124 integral reverse S p-n junction diode.
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  – 1.5 V TJ = 25°C, IS = 31A, VGS = 0V „
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  – 170 250 TJ = 25°C IF = 31A ns
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  – 220 330 TJ = 125°C di/dt = 100A/.

The same part from a different manufacturer

Datasheet IRFP31N50L - INCHANGE IRFP31N50L

iscN-Channel MOSFET Transistor IRFP31N50L ·FEATURES ·Low drain-source on-resistance: RDS(ON) =0.18Ω (MAX) ·Enhancement.

Datasheet IRFP31N50L - Vishay Siliconix IRFP31N50L

IRFP31N50L, SiHFP31N50L Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd .

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