IRFH7936PBF - International Rectifier

IRFH7936PBF Power MOSFET

IRFH7936PbF Applications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifer MOSFET for Isolated DC-DC Converters in Networking Systems VDSS 30V HEXFET® Power MOSFET RDS(on) max Qg 4.8mΩ@VGS = 10V 17nC Benefits l Very low RDS(ON) at 4.5V VGS l Low Gate Charge l Fully Characterized Avalanche Voltage and Current l 100% Tested for RG.

Features

-to-Ambient PQFN 5X6 mm Max. 30 ± 20 20 16 54 160 3.1 2.0 0.025 -55 to + 150 Typ.
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  – Max. 5.6 40 Units V A W W/°C °C Units °C/W Notes  through … are on page 9 1 www.irf.com © 2013 International Rectifier August 16, 2013 IRFH7936PbF Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions BVDSS ∆ΒVDSS/∆TJ RDS(on) Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance VGS(th) ∆VGS(th) IDSS Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current IGSS Gate-t.