IRFH7911PBF - International Rectifier

IRFH7911PBF HEXFET Power MOSFET

PD - 97427D IRFH7911PbF HEXFET® Power MOSFET VDS RDS(on) max (@VGS = 10V) Q1 30 8.6 8.3 13 Q2 30 3.0 34 28 V m             6     Ã : Ã ' *   Qg (typical) ID (@TA = 25°C) nC A 6' 1& * Dual PQFN 5X6 mm Applications • Control and synchronous MOSFET for buck converters Benefits Features and Benefits Features .

Features

Features Control and synchronous FET in one package Low charge control MOSFET (8.3 nC typical) Low RDSon synchronous MOSFET (< 3.0 mΩ) 100% Rg tested Low Profile (≤ 0.9 mm) Compatible with Existing Surface Mount Techniques RoHS Compliant Containing no Lead, no Bromide and no Halogen MSL2, Consumer Qualification Orderable part num ber IRFH7911TRPBF IRFH7911TR2PBF Package Type PQFN 5mm x 6mm PQFN 5mm x 6mm Increased power density (50% vs two PQFN 5x6) Lower switching losses results in Lower conduction losses ⇒ Increased reliability Increased power density Easier manufacturing Environmentally.