IRFH7921PbF Applications l High Frequency Point-of-Load Synchronous Buck Converter for Applications in Neworking & Computing Systems l Optimized for Control FET Applications VDSS 30V HEXFET® Power MOSFET RDS(on) max Qg 8.5mΩ@VGS = 10V 9.3nC Benefits l Very low RDS(ON) at 4.5V VGS l Low Gate Charge l Fully Characterized Avalanche Voltage and Current l .
RθJC RθJA
f Junction-to-Case g Junction-to-Ambient
Max. 30 ± 20 15 12 34 120 3.1 2.0
0.025 -55 to + 150
Units V
A W W/°C °C
Typ.
–
–
–
–
–
–
Max. 7.9 40
Units °C/W
Notes through
are on page 9
1
www.irf.com © 2013 International Rectifier
August 16, 2013
IRFH7921PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
BVDSS ∆ΒVDSS/∆TJ RDS(on)
VGS(th) ∆VGS(th)
Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance
Gate Threshold Voltage Gate Threshold Voltage Coefficient
30
–
–
–
–
–
–
–
–
– 1.35 .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IRFH7923PBF |
International Rectifier |
Power MOSFET | |
2 | IRFH7911PBF |
International Rectifier |
HEXFET Power MOSFET | |
3 | IRFH7914PBF |
International Rectifier |
Power MOSFET | |
4 | IRFH7932PBF |
International Rectifier |
Power MOSFET | |
5 | IRFH7934PBF |
International Rectifier |
Power MOSFET | |
6 | IRFH7936PBF |
International Rectifier |
Power MOSFET | |
7 | IRFH7004PBF |
International Rectifier |
HEXFET Power MOSFET | |
8 | IRFH7004TRPBF |
International Rectifier |
HEXFET Power MOSFET | |
9 | IRFH7084PbF |
International Rectifier |
HEXFET Power MOSFET | |
10 | IRFH7084TRPbF |
International Rectifier |
HEXFET Power MOSFET | |
11 | IRFH7085PBF |
International Rectifier |
Power MOSFET | |
12 | IRFH7107PBF |
International Rectifier |
HEXFET Power MOSFET |