IRFH7923PBF - International Rectifier

IRFH7923PBF Power MOSFET

www.DataSheet4U.com PD - 96139 IRFH7923PbF Applications l HEXFET® Power MOSFET l High Frequency Point-of-Load Synchronous Buck Converter for Applications in Neworking & Computing Systems Optimized for Control FET Applications VDSS 30V RDS(on) max Qg 8.7m @VGS = 10V 8.7nC : Benefits l l l l l l l l Very low RDS(ON) at 4.5V VGS Low Gate Charge Fully .

Features

ating Factor Operating Junction and g 1.9 0.02 -55 to + 150 Storage Temperature Range Thermal Resistance Parameter RθJC RθJA Junction-to-Case f Typ.
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  – Max. 8.3 42 Units °C/W Junction-to-Ambient g Notes  through … are on page 9 www.irf.com 3/3/08 1 www.DataSheet4U.com IRFH7923PbF Static @ TJ = 25°C (unless otherwise specified) Parameter BVDSS ∆ΒVDSS/∆TJ RDS(on) VGS(th) ∆VGS(th) IDSS IGSS gfs Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss RG td(on) tr td(off) tf Ciss Coss Crss Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate .