Application Half-bridge and full-bridge topologies Synchronous rectifier applications Resonant mode power supplies DC/DC converters DC/AC Inverters Benefits Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Fully Characterized Capacitance and Avalanche SOA Enhanced body diode dV/dt and dI/dt Capability Lead-Free, RoHS Compl.
(°C) 150 Fig 2. Maximum Drain Current vs. Case Temperature 1 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback March 17, 2015 IRFH7085PbF Absolute Maximum Rating Symbol Parameter ID @ TA = 25°C Continuous Drain Current, VGS @ 10V ID @ TC(Bottom) = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC(Bottom) = 100°C Continuous Drain Current, VGS @ 10V ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited) IDM PD @ TC = 25°C Pulsed Drain Current Maximum Power Dissipation Linear Derating Factor VGS TJ TSTG Gate-to-Source Volta.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IRFH7084PbF |
International Rectifier |
HEXFET Power MOSFET | |
2 | IRFH7084TRPbF |
International Rectifier |
HEXFET Power MOSFET | |
3 | IRFH7004PBF |
International Rectifier |
HEXFET Power MOSFET | |
4 | IRFH7004TRPBF |
International Rectifier |
HEXFET Power MOSFET | |
5 | IRFH7107PBF |
International Rectifier |
HEXFET Power MOSFET | |
6 | IRFH7107TRPBF |
International Rectifier |
HEXFET Power MOSFET | |
7 | IRFH7110PBF |
International Rectifier |
HEXFET Power MOSFET | |
8 | IRFH7110TRPBF |
International Rectifier |
HEXFET Power MOSFET | |
9 | IRFH7182PBF |
International Rectifier |
Power MOSFET | |
10 | IRFH7184PBF |
International Rectifier |
Power MOSFET | |
11 | IRFH7185PBF |
International Rectifier |
Power MOSFET | |
12 | IRFH7187PbF |
International Rectifier |
Power MOSFET |