IRFD214 - International Rectifier

IRFD214 Power MOSFET

Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness. The 4-pin DIP package is a low-cost machine-insertable case style which can be stacked in multiple combinations on standard 0.1 inch pin centers. The dual drain serves as a .

Features

Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max. 0.45 0.29 3.6 1.0 0.0083 ±20 57 0.45 0.10 4.8 -55 to + 150 300 (1.6mm from case) Units A W W/°C V mJ A mJ V/ns °C Thermal Resistance RθJA Parameter Junction-to-Ambient Min. — Typ. — Max. Units 120 °C/W Revision 0 IRFD214 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter V(BR)DSS Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Res.