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IRFD214 |
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| Part Number | IRFD214 |
| Manufacturer | Vishay (https://www.vishay.com/) |
| Description | Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The 4 pin DIP package i... |
| Features |
• Dynamic dV/dt rating • Repetitive avalanche rated • For automatic insertion • End stackable • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The 4 pin DIP package is a low cost machine-insertable case style which can be stacked in multiple combinations on standard 0.1" pin centers. The dual drain ... |
| Document |
 IRFD214 Data Sheet
PDF 409.34KB |
| Distributor | Stock | Price | Buy |
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IRFD210 |
Intersil Corporation |
N-Channel Power MOSFET |
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| 2 | IRFD210 |
International Rectifier |
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| 3 | IRFD210 |
GE |
FIELD EFFECT POWER TRANSISTOR |
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| 4 | IRFD210PBF |
International Rectifier |
HEXFET Power MOSFET |
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| 5 | IRFD211 |
GE |
FIELD EFFECT POWER TRANSISTOR |
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