PD - 96200 Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Worldwide Best RDS(on) in TO-220 l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt.
perating Junction and Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Avalanche Characteristics
EAS (Thermally limited) IAR EAR
eSingle Pulse Avalanche Energy dAvalanche Current dRepetitive Avalanche Energy
Thermal Resistance
Symbol RθJC
Parameter
jJunction-to-Case
RθCS
Case-to-Sink, Flat Greased Surface
RθJA Junction-to-Ambient
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D Drain
S Source
Max.
c210 c150
120 850 370 2.5 ± 20 2.5 -55 to + 175
300
x x10lbf in (1.1N m)
200 See Fig. 14, 15, 22a, 22b,
Typ.
–
–
– 0.50
–
–
–
Max. 0.402
–
–
–
62
Units
A
.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IRFB3077 |
INCHANGE |
N-Channel MOSFET | |
2 | IRFB3077PBF |
International Rectifier |
Power MOSFET | |
3 | IRFB3004 |
INCHANGE |
N-Channel MOSFET | |
4 | IRFB3004GPbF |
International Rectifier |
Power MOSFET | |
5 | IRFB3004PBF |
International Rectifier |
Power MOSFET | |
6 | IRFB3006 |
INCHANGE |
N-Channel MOSFET | |
7 | IRFB3006GPBF |
International Rectifier |
Power MOSFET | |
8 | IRFB3006PBF |
International Rectifier |
Power MOSFET | |
9 | IRFB31N20 |
International Rectifier |
Power MOSFET | |
10 | IRFB31N20D |
International Rectifier |
Power MOSFET | |
11 | IRFB31N20D |
INCHANGE |
N-Channel MOSFET | |
12 | IRFB31N20DPBF |
International Rectifier |
Power MOSFET |