IRFB3006GPBF - International Rectifier

IRFB3006GPBF Power MOSFET

PD - 96238 IRFB3006GPbF HEXFET® Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits G Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/d.

Features

ture Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting torque, 6-32 or M3 screw Max. d f 270 190 195 1080 375 2.5 ± 20 10 -55 to + 175 300 10lb in (1.1N m) 320 See Fig. 14, 15, 22a, 22b, ™ ™ Units A W W/°C V V/ns °C x x Avalanche Characteristics EAS (Thermally limited) IAR EAR Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Ãd e Thermal Resistance Symbol RθJC RθCS RθJA g mJ A mJ Junction-to-Case Case-to-Sink, Flat Greased Surface Junction-to-Ambient j Parameter Typ.
  –
  –
  – 0.50
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  – Max. 0.4
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  – 62 Units °C/W www.irf.com 1 06.