isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRFB3006, IIRFB3006 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤2.5mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·reliable device for use in a wide variety of applications ·A.
·Static drain-source on-resistance:
RDS(on) ≤2.5mΩ
·Enhancement mode
·Fast Switching Speed
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION
·reliable device for use in a wide variety of applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
60
VGS
Gate-Source Voltage
±20
ID
Drain Current-Continuous
195
IDM
Drain Current-Single Pulsed
1080
PD
Total Dissipation @TC=25℃
375
Tj
Max. Operating Junction Temperature
175
Tstg
Storage Temperature
-55~175
UNIT V V A A.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IRFB3004 |
INCHANGE |
N-Channel MOSFET | |
2 | IRFB3004GPbF |
International Rectifier |
Power MOSFET | |
3 | IRFB3004PBF |
International Rectifier |
Power MOSFET | |
4 | IRFB3006GPBF |
International Rectifier |
Power MOSFET | |
5 | IRFB3006PBF |
International Rectifier |
Power MOSFET | |
6 | IRFB3077 |
INCHANGE |
N-Channel MOSFET | |
7 | IRFB3077GPBF |
International Rectifier |
Power MOSFET | |
8 | IRFB3077PBF |
International Rectifier |
Power MOSFET | |
9 | IRFB31N20 |
International Rectifier |
Power MOSFET | |
10 | IRFB31N20D |
International Rectifier |
Power MOSFET | |
11 | IRFB31N20D |
INCHANGE |
N-Channel MOSFET | |
12 | IRFB31N20DPBF |
International Rectifier |
Power MOSFET |