iscN-Channel MOSFET Transistor IRFB13N50A ·FEATURES ·Low drain-source on-resistance: RDS(ON) =0.45Ω (MAX) ·Enhancement mode: Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBO.
·Low drain-source on-resistance:
RDS(ON) =0.45Ω (MAX)
·Enhancement mode:
Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA)
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION
·Switching Voltage Regulators
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
500
V
VGS
Gate-Source Voltage
±30
V
ID
Drain Current-Continuous
14
A
IDM
Drain Current-Single Pulsed
56
A
PD
Total Dissipation @TC=25℃
250
W
Tj
Max. Operating Junction Temperature -55~150
℃
Tstg
Storage Temperature
-.
IRFB13N50A, SiHFB13N50A Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd .
PD - 94339 SMPS MOSFET IRFB13N50A HEXFET® Power MOSFET Applications l Switch Mode Power Supply (SMPS) l Uninterruptib.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IRFB13N50APBF |
International Rectifier |
SMPS MOSFET | |
2 | IRFB11N50 |
International Rectifier |
Power MOSFET | |
3 | IRFB11N50A |
Vishay |
Power MOSFET | |
4 | IRFB11N50A |
International Rectifier |
Power MOSFET | |
5 | IRFB11N50APBF |
International Rectifier |
SMPS MOSFET | |
6 | IRFB16N50K |
Vishay |
Power MOSFET | |
7 | IRFB16N50K |
International Rectifier |
Power MOSFET | |
8 | IRFB16N50KPbF |
International Rectifier |
POWER MOSFET | |
9 | IRFB16N60L |
International Rectifier |
SMPS MOSFET | |
10 | IRFB16N60LPBF |
International Rectifier |
SMPS MOSFET | |
11 | IRFB17N20D |
International Rectifier |
Power MOSFET | |
12 | IRFB17N20DPBF |
International Rectifier |
HEXFET Power MOSFET |