IRFB13N50A |
Part Number | IRFB13N50A |
Manufacturer | INCHANGE |
Description | iscN-Channel MOSFET Transistor IRFB13N50A ·FEATURES ·Low drain-source on-resistance: RDS(ON) =0.45Ω (MAX) ·Enhancement mode: Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA) ·100% avalanche tested ·Minimum... |
Features |
·Low drain-source on-resistance: RDS(ON) =0.45Ω (MAX) ·Enhancement mode: Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 500 V VGS Gate-Source Voltage ±30 V ID Drain Current-Continuous 14 A IDM Drain Current-Single Pulsed 56 A PD Total Dissipation @TC=25℃ 250 W Tj Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -... |
Document |
IRFB13N50A Data Sheet
PDF 279.52KB |
Distributor | Stock | Price | Buy |
---|
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | IRFB13N50A |
International Rectifier |
Power MOSFET | |
2 | IRFB13N50A |
Vishay |
Power MOSFET | |
3 | IRFB13N50APBF |
International Rectifier |
SMPS MOSFET | |
4 | IRFB11N50 |
International Rectifier |
Power MOSFET | |
5 | IRFB11N50A |
Vishay |
Power MOSFET |