IRFB17N20DPBF - International Rectifier

IRFB17N20DPBF HEXFET Power MOSFET

PD- 95325 www.datasheet4u.com SMPS MOSFET IRFB17N20DPbF IRFS17N20DPbF IRFSL17N20DPbF HEXFET® Power MOSFET l l Applications High frequency DC-DC converters Lead-Free VDSS 200V RDS(on) max 0.17Ω ID 16A Benefits Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. No.

Features

) 10 lbf
•in (1.1N
•m) Units A W W/°C V V/ns °C Typical SMPS Topologies l Telecom 48V input Forward Converter Notes  through … are on page 11 www.irf.com 1 6/1/04 IRFB/IRFS/IRFSL17N20DPbF Static @ TJ = 25°C (unless otherwise specified) www.datasheet4u.com Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage V(BR)DSS IDSS IGSS Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Parameter Forward Transconductance Total Gate Charge .