IRF8788PBF - International Rectifier

IRF8788PBF Power MOSFET

The IRF8788PbF incorporates the latest HEXFET Power MOSFET Silicon Technology into the industry standard SO-8 package. The IRF8788PbF has been optimized for parameters that are critical in synchronous buck operation including Rds(on) and gate charge to reduce both conduction and switching losses. The reduced total losses make this product ideal for high effi.

Features

ings Parameter VDS VGS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Max. 30 ±20 24 19 190 2.5 1.6 0.02 -55 to + 150 Units V c A Power Dissipation Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range W W/°C °C Thermal Resistance RθJL RθJA g Junction-to-Ambient fg Junction-to-Drain Lead Parameter Typ.
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  – Max. 20 50 Units °C/W Notes  through … are on page 9 www.irf.com 1 8/18/0.