IRF8707GPbF - International Rectifier

IRF8707GPbF Power MOSFET

The IRF8707GPbF incorporates the latest HEXFET Power MOSFET Silicon Technology into the industry standard SO-8 package. The IRF8707GPbF has been optimized for parameters that are critical in synchronous buck operation including Rds(on) and gate charge to reduce both conduction and switching losses. The reduced total losses make this product ideal for high e.

Features

tions. Absolute Maximum Ratings Parameter Max. Units VDS VGS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V cContinuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation 30 ± 20 V 11 9.1 A 88 2.5 1.6 W TJ TSTG Linear Derating Factor Operating Junction and Storage Temperature Range 0.02 -55 to + 150 W/°C °C Thermal Resistance Parameter gRθJL Junction-to-Drain Lead fRθJA Junction-to-Ambient Notes  through … are on page 9 www.irf.com Typ.
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