IRF8721PBF - International Rectifier

IRF8721PBF Power MOSFET

HEXFET® Power MOSFET VDSS RDS(on) max Qg 30V 8.5m:@VGS = 10V 8.3nC A A D D D D S S S G 1 2 3 4 8 7 6 5 Top View SO-8 The IRF8721PbF incorporates the latest HEXFET Power MOSFET Silicon Technology into the industry standard SO-8 package The IRF8721PbF has been optimized for parameters that are critical in synchronous buck operation including Rds(on.

Features

tings Parameter VDS VGS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Max. 30 ± 20 14 11 110 2.5 1.6 0.02 -55 to + 150 Units V c A W W/°C °C Power Dissipation Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Thermal Resistance RθJL RθJA g Junction-to-Ambient fg Junction-to-Drain Lead Parameter Typ.
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  – Max. 20 50 Units °C/W Notes  through … are on page 9 www.irf.com 07/30/0.