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IRF8788PBF |
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| Part Number | IRF8788PBF |
| Manufacturer | International Rectifier |
| Description | The IRF8788PbF incorporates the latest HEXFET Power MOSFET Silicon Technology into the industry standard SO-8 package. The IRF8788PbF has been optimized for parameters that are critical in synchronous... |
| Features |
ings
Parameter
VDS VGS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current
Max.
30 ±20 24 19 190 2.5 1.6 0.02 -55 to + 150
Units
V
c
A
Power Dissipation Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range
W W/°C °C
Thermal Resistance
RθJL RθJA
g Junction-to-Ambient fg
Junction-to-Drain Lead
Parameter
Typ.
– – – – – – Max. 20 50 Units °C/W Notes through are on page 9 www.irf.com 1 8/18/0... |
| Document |
 IRF8788PBF Data Sheet
PDF 263.80KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IRF8788PBF-1 |
International Rectifier |
Power MOSFET |
|
| 2 | IRF8707GPbF |
International Rectifier |
Power MOSFET |
|
| 3 | IRF8707PBF |
International Rectifier |
Power MOSFET |
|
| 4 | IRF8714GPbF |
International Rectifier |
Power MOSFET |
|
| 5 | IRF8714PBF |
International Rectifier |
Power MOSFET |
|