IRF8721GPbF - International Rectifier

IRF8721GPbF Power MOSFET

The IRF8721GPbF incorporates the latest HEXFET Power MOSFET Silicon Technology into the industry standard SO-8 package The IRF8721GPbF has been optimized for parameters that are critical in synchronous buck operation including Rds(on) and gate charge to reduce both conduction and switching losses. The reduced total losses make this product ideal for high.

Features

ings Parameter VDS Drain-to-Source Voltage VGS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V cContinuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation TJ TSTG Linear Derating Factor Operating Junction and Storage Temperature Range Max. 30 ± 20 14 11 110 2.5 1.6 0.02 -55 to + 150 Units V A W W/°C °C Thermal Resistance Parameter gRθJL Junction-to-Drain Lead fRθJA Junction-to-Ambient Notes  through … are on page 9 www.irf.com Typ.
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  – Max. 20 50 Units °C/W 1 07/10/09 IR.