IRF8721GPbF |
Part Number | IRF8721GPbF |
Manufacturer | International Rectifier |
Description | The IRF8721GPbF incorporates the latest HEXFET Power MOSFET Silicon Technology into the industry standard SO-8 package The IRF8721GPbF has been optimized for parameters that are critical in synchro... |
Features |
ings
Parameter
VDS Drain-to-Source Voltage
VGS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C
Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V
cContinuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation Power Dissipation
TJ TSTG
Linear Derating Factor Operating Junction and
Storage Temperature Range
Max. 30 ± 20 14 11 110 2.5 1.6
0.02 -55 to + 150
Units V
A
W W/°C
°C
Thermal Resistance
Parameter
gRθJL Junction-to-Drain Lead fRθJA Junction-to-Ambient
Notes through
are on page 9 www.irf.com
Typ. – – – – – – Max. 20 50 Units °C/W 1 07/10/09 IR... |
Document |
IRF8721GPbF Data Sheet
PDF 249.42KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IRF8721PBF |
International Rectifier |
Power MOSFET | |
2 | IRF8721PBF-1 |
International Rectifier |
Power MOSFET | |
3 | IRF8707GPbF |
International Rectifier |
Power MOSFET | |
4 | IRF8707PBF |
International Rectifier |
Power MOSFET | |
5 | IRF8714GPbF |
International Rectifier |
Power MOSFET |